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參數(shù)資料
| 型號： | AUIRFU4105Z |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 317K |
| 代理商： | AUIRFU4105Z |
AUIRFR4105Z
AUIRFU4105Z
HEXFET Power MOSFET
07/23/2010
www.irf.com
1
AUTOMOTIVE GRADE
PD - 97544
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
GD
S
Gate
Drain
Source
D-Pak
AUIRFR4105Z
I-Pak
AUIRFU4105Z
G
D
S
G
D
S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
3.12
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300
10 lbf
yin (1.1Nym)
48
0.32
± 20
Max.
30
21
120
46
29
See Fig.12a, 12b, 15, 16
V(BR)DSS
55V
RDS(on) max. 24.5m
ID
30A
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