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參數(shù)資料
型號(hào): AUIRGB4062D
元件分類: IGBT 晶體管
英文描述: 48 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/16頁(yè)
文件大小: 621K
代理商: AUIRGB4062D
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGB4062D
AUIRGP4062D
AUIRGP4062D-E
1
www.irf.com
02/10/11
E
G
n-channel
C
VCES = 600V
IC = 24A, TC = 100°C
tSC ≥ 5s, TJ(max) = 175°C
VCE(on) typ. = 1.60V
GC
E
Gate
Collector
Emitter
TO-247AC
AUIRGP4062D
TO-220AB
AUIRGB4062D
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5s SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified
*Qualification standards can be found at http://www.irf.com/
G
C
E
C
G
C
E
C
TO-247AD
AUIRGP4062D-E
G
C
E
PD - 96353
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
48
IC @ TC = 100°C
Continuous Collector Current
24
ICM
Pulse Collector Current, VGE = 15V
72
ILM
Clamped Inductive Load Current, VGE = 20V
c
96
A
IF @ TC = 25°C
Diode Continous Forward Current
48
IF @ TC = 100°C
Diode Continous Forward Current
24
IFM
Diode Maximum Forward Current
e
96
VGE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
250
W
PD @ TC = 100°C
Maximum Power Dissipation
125
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-220
–––
0.60
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode) TO-220
–––
1.53
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-247
–––
0.65
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode) TO-247
–––
1.62
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)-TO-220
–––
0.50
–––
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)-TO-247
0.24
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)-TO-220
–––
62
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)- TO-247
–––
40
–––
相關(guān)PDF資料
PDF描述
AUIRGP4062D-E 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
AUIRGP4063D-E 96 A, 600 V, N-CHANNEL IGBT, TO-247AD
AUIRGP4063D 96 A, 600 V, N-CHANNEL IGBT, TO-247AC
AUIRGP50B60PD1E 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
AUIRGP50B60PD1 60 A, 600 V, N-CHANNEL IGBT, TO-247AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AUIRGF65G40D0 功能描述:IGBT 600V 62A 625W Through Hole TO-247AD 制造商:infineon technologies 系列:CooliRIGBT? 包裝:管件 零件狀態(tài):有效 IGBT 類型:- 電壓 - 集射極擊穿(最大值):600V 電流 - 集電極(Ic)(最大值):62A 脈沖電流 - 集電極 (Icm):84A 不同?Vge,Ic 時(shí)的?Vce(on):2.2V @ 15V,20A 功率 - 最大值:625W 開關(guān)能量:298μJ(開),147μJ(關(guān)) 輸入類型:標(biāo)準(zhǔn) 柵極電荷:270nC 25°C 時(shí) Td(開/關(guān))值:35ns/142ns 測(cè)試條件:400V,20A,4.7歐姆,15V 反向恢復(fù)時(shí)間(trr):41ns 封裝/外殼:TO-247-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-247AD 標(biāo)準(zhǔn)包裝:25
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