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參數資料
| 型號： | AUIRGP4063D-E |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 96 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 439K |
| 代理商： | AUIRGP4063D-E |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGP4063D
AUIRGP4063D-E
PD - 97629
1
www.irf.com
01/20/2011
E
G
n-channel
C
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5s, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 S short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
96
IC @ TC = 100°C
Continuous Collector Current
48
ICM
Pulse Collector Current, VGE = 15V
144
ILM
Clamped Inductive Load Current, VGE = 20V c
192
A
IF @ TC = 25°C
Diode Continous Forward Current
96
IF @ TC = 100°C
Diode Continous Forward Current
48
IFM
Diode Maximum Forward Current
e
192
VGE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
330
W
PD @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
–––
0.45
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
0.92
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
80
–––
GC
E
Gate
Collector
Emitter
TO-247AC
AUIRGP4063D
TO-247AD
AUIRGP4063D-E
G C
E
C
G C
E
C
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