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參數(shù)資料
| 型號： | AUIRGU4045D |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 12 A, 600 V, N-CHANNEL IGBT, TO-251AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 453K |
| 代理商： | AUIRGU4045D |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045D
AUIRGU4045D
1
www.irf.com
02/14/11
VCES = 600V
IC = 6.0A, TC = 100°C
VCE(on) typ. = 1.7V
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5s SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified*
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
PD - 97637
AUTOMOTIVE GRADE
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
V
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
Continuous Collector Current
ICM
Pulsed Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V c
A
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
d
Continuous Gate-to-Emitter Voltage
V
Transient Gate-to-Emitter Voltage
PD @ TC =25°
Maximum Power Dissipation
W
PD @ TC =100°
Maximum Power Dissipation
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
e
–––
1.9
RθJC
Junction-to-Case - Diode e
–––
6.8
RθJA
Junction-to-Ambient (PCB Mount) g
–––
50
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (0.063 in. (1.6mm) from case)
± 20
± 30
77
39
°C/W
VGE
600
12
6.0
18
24
8.0
4.0
24
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A) is 25°C, unless otherwise specified.
*Qualification standards can be found at http://www.irf.com/
E
G
n-channel
C
GC
E
Gate
Colletor
Emitter
D-Pak
AUIRGR4045D
I-Pak
AUIRGU4045D
G
C
E
G
C
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| AUIRL1404L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE GRADE |
| AUIRL1404S | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL1404S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 160A TO-2 |
| AUIRL1404STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL1404STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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