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參數(shù)資料
| 型號： | AUIRL1404ZSTRL |
| 元件分類： | JFETs |
| 英文描述： | 160 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 375K |
| 代理商： | AUIRL1404ZSTRL |
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
HEXFET Power MOSFET
08/26/10
www.irf.com
1
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
S
D
G
Features
l
Logic Level
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
D2Pak
AUIRL1404ZS
TO-220AB
AUIRL1404Z
TO-262
AUIRL1404ZL
PD - 96331
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
D
S
D
G
D
S
D
G
D
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
V(BR)DSS
40V
RDS(on) typ.
2.5m
max.
3.1m
ID (Silicon Limited) 180A l
ID (Package Limited) 160A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
k
RθCS
Case-to-Sink, Flat, Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
°C/W
A
mJ
°C
490
190
See Fig.12a, 12b, 15, 16
200
1.3
± 16
Max.
180
l
130
790
160
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
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| AUIRL1404ZSTRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL2203N | 功能描述:MOSFET 30V 100A 7 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL3705N | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 10mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL3705N | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 89A TO-22 |
| AUIRL3705Z | 功能描述:MOSFET 55V, 86A, 12mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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