- 您現在的位置：買賣IC網 > PDF目錄42911 > AUIRLU024N 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA PDF資料下載
參數資料
| 型號： | AUIRLU024N |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, IPAK-3 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 312K |
| 代理商： | AUIRLU024N |
HEXFET Power MOSFET
01/18/11
www.irf.com
1
AUIRLR024N
AUIRLU024N
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Low On-Resistance
l
Logic-Level Gate Drive
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications, this
Cellular design of HEXFET Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
Description
Features
D-Pak
AUIRLR024N
GD
S
Gate
Drain
Source
I-Pak
AUIRLU024N
S
D
G
D
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
V(BR)DSS
55V
RDS(on) max.
0.065
ID
17A
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (1.6mm from case )
45
0.3
± 16
5.0
4.5
68
11
Max.
17
12
72
S
D
G
PD- 96348
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRLR024N | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR024NTRR | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR024NTR | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR120NTRR | 10 A, 100 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLR120NTRL | 10 A, 100 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRLU024Z | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 55V 7A 58MOHM - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 55V 16A SOT 223 制造商:International Rectifier 功能描述:Automotive FET 55V 7A 58mOhm |
| AUIRLU2905 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLU3110Z | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLU3110Z | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 100V 42A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 100V, 42A, TO-251AA |
| AUIRLU3114Z | 功能描述:MOSFET NCH 40V 130A IPAK 制造商:infineon technologies 系列:汽車級，AEC-Q101，HEXFET? 包裝:管件 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:40V 電流 - 連續漏極（Id）（25°C 時）:130A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:4.9 毫歐 @ 42A，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 100μA 不同 Vgs 時的柵極電荷（Qg）:56nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:3810pF @ 25V 功率 - 最大值:140W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-251-3 短引線，IPak，TO-251AA 供應商器件封裝:IPAK（TO-251） 標準包裝:75 |
發布緊急采購，3分鐘左右您將得到回復。