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參數資料
| 型號： | AV1015LT1 |
| 廠商： | Avic Technology |
| 英文描述： | SOT-23 Plastic-Encapsulate Transistors |
| 中文描述： | 采用SOT - 23塑料封裝晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 108K |
| 代理商： | AV1015LT1 |
@vic
AV1015LT1
SOT-23 Plastic-Encapsulate Transistors
AV1015LT1
TRANSISTOR PNP
FEATURES
Power dissipation
P
CM
: 0.2 W
Collector current
I
CM
: -0.15 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
T
stg
: -55
Tamb=25
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -0.1mA
I
B
=0
-50
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -10
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -50 V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=- 5V , I
C
=0
-0.1
A
DC current gain
H
FE(1)
V
CE
=-6V, I
C
= -2mA
130
400
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-100 mA, I
B
= -10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-100 mA, I
B
= -10mA
-1.1
V
Transition frequency
f
T
V
CE
=-10V, I
C
= -1mA
f=
30MHz
80
MHz
CLASSIFICATION OF H
FE(1)
MARKING
BA
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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