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參數資料
| 型號： | AV42LT1 |
| 廠商： | Avic Technology |
| 英文描述： | TRANSISTOR（ NPN ） |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 170K |
| 代理商： | AV42LT1 |
AV
42LT1
TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 0.3 W
Collector current
I
CM:
0.3 A
Collector-base voltage
V
(BR)CBO
: 300 V
Operating and storage junction temperature range
T
J
T
stg
: -55
Tamb=25
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A
I
E
=0
300
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 1 mA
I
B
=0
300
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=200 V , I
E
=0
0.25
A
Emitter cut-off current
I
EBO
V
EB
= 5V , I
C
=0
0.1
A
H
FE 1
V
CE
= 10V, I
C
= 1mA
60
H
FE 2
V
CE
= 10V, I
C
=10mA
100
200
DC current gain
H
FE 3
V
CE
=10V, I
C
=30mA
60
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=20 mA, I
B
= 2mA
0.2
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 20 mA, I
B
=2mA
0.9
V
Transition frequency
f
T
V
CE
= 20V, I
C
= 10mA
f=
30MHz
50
MHz
DEVICE MARKING
MMBTA42LT1=1D
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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