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參數資料
| 型號： | AV8050 |
| 廠商： | Avic Technology |
| 英文描述： | TO-92 Plastic-Encapsulate Transistors |
| 中文描述： | 至92塑料封裝晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 174K |
| 代理商： | AV8050 |
@vic
AV8050
TO-92 Plastic-Encapsulate Transistors
Copyright Avic Electronics Corp.
1
Website:
http://www.avictek.com
AV8050 TRANSISTOR
（
NPN
）
FEATURES
Power dissipation
P
CM
: 1 W
（
Tamb=25
℃）
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
，
T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS
（
Tamb=25
℃
unless otherwise specified
）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
μ
A
，
I
E
=0
40
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 0.1 mA , I
B
=0
25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
μ
A
，
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
= 40 V , I
E
=0
0.1
μ
A
Collector cut-off current
I
CEO
V
CE
= 20 V , I
B
=0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 5 V , I
C
=0
0.1
μ
A
H
FE
（
1
）
V
CE
= 1 V , I
C
= 100 mA
85
300
DC current gain
H
FE
（
2
）
V
CE
= 1 V , I
C
=800 mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 800 mA, I
B
= 80 mA
0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 800mA, I
B
= 80 mA
1.2
V
Base-emitter voltage
V
BE
I
E
= 1.5A
1.6
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 50mA
f =30
MHz
190
MHz
CLASSIFICATION OF HFE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
1
2
3
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
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