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參數(shù)資料
| 型號(hào)： | AV965 |
| 廠商： | Avic Technology |
| 英文描述： | TO-92 Plastic-Encapsulate Transistors |
| 中文描述： | 至92塑料封裝晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 508K |
| 代理商： | AV965 |
@vic
AV965
TO-92 Plastic-Encapsulate Transistors
AV965
TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 0.75 W
Collector current
I
CM
: 5 A
Collector-base voltage
V
(BR)CBO
: 42 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic=1 A
I
E
=0
42
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 1 mA
I
B
=0
22
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 10
A
I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
= 30 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 6 V
I
C
=0
0.1
A
H
FE 1
V
CE
= 2 V, I
C
= 0.15
mA
150
H
FE 2
V
CE
= 2V, I
C
= 500 mA
340
950
DC current gain
H
FE 3
V
CE
= 2V, I
C
= 2000
mA
150
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=3000mA,I
B
=100 mA
0.35
V
CLASSIFICATION OF H
FE(2)
Rank
R
T
Range
340-600
560-950
1
2
3
TO
92
1.EMITTER
2. COLLECTOR
3. BASE
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