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參數資料
| 型號： | AWT0908 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數： | 1/5頁 |
| 文件大小： | 57K |
| 代理商： | AWT0908 |
This data sheet contains technical information about product ANADIGICS is planning to introduce. The data and product
specifications are subject to change prior to formal introduction. Please note: This device is NOT to be used for device
qualification or production.
35 Technology Drive, Warren NJ 07059
z
(908)668 5000
z
(908)668 5132
z
Email: mktg@anadigics.com 10/07/98 1
AWT0908
TX POWER MMIC
Advanced Product Information
Rev 0
900 MHz Band GSM GaAs Power Amplifier IC
DESCRIPTION
The AWT0908 is a monolithic Power Amplifier IC
suited for GSM cellular telephone Applications
FEATURES
High Output Power
High Efficiency
Single Supply
Low Harmonics
Built in Pulse Shaping
Small Size
Surface Mount Package
50
Input Impedance
Low Cost
SOIC SLUG
9001196
1
2
3
4
5
6 7 8 9
10
11
12
23 22 21 20
18
17
16
15
25
24
13
14
19
28
27
26
1. Maximum Ratings
Static sensitive electronic devices. Do not operate or store near strong electrostatic, fields. Take
proper ESD precautions.
Pin
Rating
+ 12 dBm max.,
+ 5V max., 0 V min.
Notes
Pin 2 - RF
IN
Pin 3 - V
REF
If V
REF
is kept high and not pulsed, the amplifier
may draw very high currents and permanent
damage may occur.
Pin 4 - VdB
Pin 5 - V
SSIN
+7.5V max., 0 V min.
N/A
Do not apply voltage to this pin. If V
SSIN
is not
between - 4V and - 4.5V (with V
GEN
= 4.8V), the
amplifier may not work properly.
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