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參數資料
| 型號： | BA779-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode PIN Attenuator 30V 3-Pin SOT-23 T/R |
| 中文描述： | PIN Diodes 30 Volt 5kohm |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | BA779-GS08 |
BA779-G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 25-Feb-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 83321
RF PIN Diodes
FEATURES
Wide frequency range 10 MHz to 1 GHz
AEC-Q101 qualified
Base P/N-HG3 - green, automotive grade
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
APPLICATIONS
Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
1
2
3
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
Single diode
REMARKS
BA779-G
BA779-HG3-08
PH1
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
TEST CONDITION
Reverse voltage
Forward continuous current
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
on PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
R
thJA
500
K/W
Junction temperature
Storage temperature range
Operating temperature range
T
j
125
°C
°C
°C
T
stg
T
op
- 55 to + 150
- 55 to + 125
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 20 mA
Reverse current
V
R
= 30 V
Diode capacitance
f = 100 MHz, V
R
= 0 V
Differential forward resistance
f = 100 MHz, I
F
= 1.5 mA
Reverse impedance
f = 100 MHz, V
R
= 0 V
Minority carrier lifetime
I
F
= 10 mA, I
R
= 10 mA
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
μs
BA779-G
5
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BA779-HG3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:PIN DIODE SOT23 |
| BA779S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Diodes |
| BA779S-GS08 | 功能描述:PIN 二極管 30 Volt 9kohm RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| BA779-V-GH | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:RF PIN Diodes |
| BA779-V-GH-08 | 功能描述:PIN 二極管 30V 50mA RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
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