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參數資料
| 型號： | BAQ335-TR3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel |
| 中文描述： | Diodes (General Purpose, Power, Switching) 125 Volt 200mA 2.0 Amp IFSM |
| 文件頁數： | 1/4頁 |
| 文件大小： | 75K |
| 代理商： | BAQ335-TR3 |
BAQ333, BAQ334, BAQ335
Vishay Semiconductors
www.vishay.com
Rev. 2.1, 01-Aug-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85538
Small Signal Switching Diodes, Low Leakage Current
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Silicon planar diodes
Saving space
Hermetic sealed parts
Fits onto SOD-323/SOT-23 footprints
Electrical data identical with the devices BAQ33
to BAQ35, BAQ133 to BAQ135
Very low reverse current
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
APPLICATIONS
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
PARTS TABLE
PART
TYPE DIFFERENTIATION
ORDERING CODE
INTERNAL CONSTRUCTION
REMARKS
BAQ333
V
RRM
= 40 V
BAQ333-TR3 or BAQ333-TR
Single diode
Tape and reel
BAQ334
V
RRM
= 70 V
BAQ334-TR3 or BAQ334-TR
Single diode
Tape and reel
BAQ335
V
RRM
= 140 V
BAQ335-TR3 or BAQ335-TR
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Repetitive peak reverse voltage
BAQ333
V
RRM
40
V
BAQ334
V
RRM
70
V
BAQ335
V
RRM
140
V
Reverse voltage
BAQ333
V
R
30
V
BAQ334
V
R
60
V
BAQ335
V
R
125
V
Peak forward surge current
t
p
= 1 μs
I
FSM
2
A
Forward continuous current
I
F
200
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, fig. 3
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500
K/W
Junction temperature
T
j
175
°C
Storage temperature range
T
stg
- 65 to + 175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| BAQ334-TR | BAQ333, BAQ334, BAQ335 Small Signal Switching Diodes, Low Leakage Current |
| BAQ334-TR3 | SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel |
| BAQ333-TR | Diode Small Signal Switching 30V 0.2A 2-Pin MicroMELF T/R |
| BAQ333-TR3 | SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel |
| BAR63V-03W-GS08 | DIODE SILICON, PIN DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-3, PIN Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BAQ33B | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes, Low Leakage Current |
| BAQ33-GS08 | 功能描述:二極管 - 通用，功率，開關 40 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAQ33-GS18 | 功能描述:二極管 - 通用，功率，開關 40 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAQ34 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Switching Diodes, Low Leakage Current |
| BAQ34-GS08 | 功能描述:二極管 - 通用，功率，開關 60 Volt 200mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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