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參數資料
| 型號： | BAS170WS-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Schottky 70V 0.07A 2-Pin SOD-323 T/R |
| 中文描述： | Schottky (Diodes & Rectifiers) 70 Volt 70mA 600mA IFSM |
| 文件頁數： | 1/3頁 |
| 文件大小： | 63K |
| 代理商： | BAS170WS-V-GS18 |
BAS170WS
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 25-Feb-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85653
Small Signal Schottky Diode
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Schottky diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Pulse test; t
p
300 μs
PARTS TABLE
PART
ORDERING CODE
INTERNAL
CONSTRUCTION
TYPE MARKING
REMARKS
BAS170WS
BAS170WS-E3-08 or BAS170WS-E3-18
BAS170WS-HE3-08 or BAS170WS-HE3-18
Single diode
73
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
(1)
SYMBOL
V
RRM
I
F
I
FSM
P
tot
VALUE
70
70
600
200
UNIT
V
mA
mA
mW
t
p
< 1 s
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Operating temperature range
Storage temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
op
T
stg
VALUE
650
125
- 55 to + 125
- 65 to + 150
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
I
R
= 10 μA (pulsed)
SYMBOL
V
(BR)
I
R
I
R
V
F
V
F
V
F
C
D
r
f
MIN.
70
TYP.
MAX.
UNIT
V
μA
μA
mV
mV
mV
pF
Leakage current
V
R
= 50 V
V
R
= 70 V
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
R
= 0 V, f = 1 MHz
I
F
= 5 mA, f = 10 kHz
0.1
10
410
750
1000
2
Forward voltage
375
705
880
1.5
34
Forward voltage
(1)
Diode capacitance
Differential forward resistance
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