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參數資料
| 型號： | BC849C-2C |
| 廠商： | Zetex Semiconductor |
| 英文描述： | SOT23 NPN SILICON PLANAR |
| 中文描述： | 采用SOT23 NPN硅平面 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 123K |
| 代理商： | BC849C-2C |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300 s, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis 2%
12
01.11.2003
1
2
3
Type
Code
2
±
2
±0.1
1
±0.1
1
±
0.3
1.3
BC 846W ... BC 850W
General Purpose Transistors
NPN
Surface mount Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
für die Oberflchenmontage
NPN
Power dissipation – Verlustleistung
200 mW
Plastic case
Kunststoffgehuse
SOT-323
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25 C)
Grenzwerte
(T
A
= 25 C)
BC 847W
BC 850W
BC 846W
BC 848W
BC 849W
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
65 V
80 V
45 V
50 V
30 V
30 V
6 V
5 V
200 mW
1
)
100 mA
200 mA
200 mA
200 mA
150 C
- 65…+ 150 C
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Group B
Group A
Group C
DC current gain – Kollektor-Basis-Stromverhltnis
2
)
V
CE
= 5 V, I
C
= 10 A
V
CE
= 5 V, I
C
= 2 mA
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain – Stromverstrkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
h
FE
h
FE
typ. 90
110...220
typ. 150
200...450
typ. 270
420...800
h
fe
h
ie
h
oe
typ. 220
1.6...4.5 k
18 < 30 S
typ. 330
3.2...8.5 k
30 < 60 S
typ. 600
6...15 k
60 < 110 S
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
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| BC849CLT1G | 功能描述:兩極晶體管 - BJT 100mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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