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參數(shù)資料
| 型號(hào)： | BCD60 |
| 廠商： | Electronic Devices, Inc. |
| 英文描述： | 100mA SILICON CARTRIDGE RECTIFIERS |
| 中文描述： | 100mA的硅濾芯整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 57K |
| 代理商： | BCD60 |
BCD RTD
Max. Reverse Recovery Time , T
rr
(Fig.4)
200 nanosec
Max. DC Reverse Current @ PRV and 25
o
C, I
R
100
Amps
Storage Temperature Range, T
STG
A
2
Ambient Operating Temperature Range,T
A
Max. DC Reverse Current @ PRV and 100
o
C, I
R
10
Amps
3
A
-55 to +125
o
C
o
C
-55 to +150
o
C
o
C
RTD SERIES
FAST
RECOVERY
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
FRM
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,I
FRM
Max. DC Reverse Current @ PRV and 25
o
C, I
R
100
Max.One-Half Cycle Surge Current, I
FM
Amps
Storage Temperature Range, T
STG
A
2
Ambient Operating Temperature Range,T
A
ELECTRICAL CHARACTERISTICS
(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 100
o
C, I
R
10
Amps
3
A
-55 to +125
o
C
o
C
-55 to +150
o
C
o
C
BCD SERIES
STANDARD
RECOVERY
(Surge )@ 60Hz
100mA SILICON CARTRIDGE RECTIFIERS
Peak
Reve rse Volta ge
PRV (Volts )
Leng th L
Fig. 3
Drop at 25
o
C And 100 mA
V
F
(Volts)
STANDARD RECOVERY
BCD08
8,000
13
1.00
BCD10
10,0 00
13
1.00
BCD12
12,0 00
13
1.00
BCD15
15,0 00
20
1.63
BCD20
20,0 00
26
2.13
BCD25
33
2.63
BCD30
30,0 00
25,000
40
3.13
BCD35
35,0 00
46
3.63
BCD40
40,0 00
53
4.13
BCD45
45,0 00
60
4.63
BCD50
50,0 00
66
5.13
BCD60
60,0 00
73
6.13
200 NANOSECOND RECOVERY (FIG.4)
RTD08
8,000
20
1.00
RTD10
10,0 00
20
1.00
RTD12
12,0 00
20
1.00
RTD15
15,0 00
30
1.63
RTD20
20,0 00
40
2.13
RTD25
25,0 00
50
2.63
RTD30
30,0 00
60
3.13
RTD35
35,0 00
70
3.63
RTD40
40,0 00
80
4.13
RTD45
45,0 00
90
4.63
RTD50
50,0 00
100
5.13
RTD60
60,0 00
110
6.13
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 60,000 VOLTS
FAST RECOVERY (RTD SERIES)
LOW LEAKAGE
Forward Current Repetitive Peak,I
EDI Type
Number
Max. Forward Voltage
EDI reserves the right to change these specifications at any time without notice.
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