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參數資料
| 型號： | BCM856DS |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP-PNP matched double transistors |
| 中文描述： | PNP-PNP 匹配雙晶體管 |
| 封裝： | BCM856BS<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BCM856DS<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<Always Pb-f |
| 文件頁數： | 1/14頁 |
| 文件大小： | 104K |
| 代理商： | BCM856DS |
1.
Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
1.2 Features
I
Current gain matching
I
Base-emitter voltage matching
I
Drop-in replacement for standard double transistors
I
AEC-Q101 qualified
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
Table 1.
Type number
Product overview
Package
NXP
SOT363
Package configuration
JEITA
SC-88
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
very small
SOT457
SC-74
small
Table 2.
Symbol
Per transistor
V
CEO
I
C
h
FE
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter voltage
collector current
DC current gain
open base
-
-
200
-
-
290
65
100
450
V
mA
V
CE
=
5 V;
I
C
=
2 mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BCM856DS,115 | 功能描述:兩極晶體管 - BJT COMPLEX DISCRETE S2023D/SOT45 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCM856DS/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP/PNP matched double transistors |
| BCM856S | 制造商:Infineon Technologies AG 功能描述:Transistor Array PNP AF 65V 100mA SOT363 |
| BCM856S_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor Array |
| BCM856SE6327BTSA1 | 制造商:Infineon Technologies AG 功能描述:TRANS ARR 2PNP 65V 100MA SOT363 |
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