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參數資料
| 型號： | BCP49 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數： | 1/2頁 |
| 文件大小： | 241K |
| 代理商： | BCP49 |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
4
01.11.2003
4
3
2
1
3
±0.1
6.5
±0.2
0.7
3.25
2.3
7
±
1.65
3
±
BCP 29, BCP 49
Darlington Transistors
NPN
Surface mount Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
für die Oberflchenmontage
NPN
Power dissipation – Verlustleistung
1.5 W
Plastic case
Kunststoffgehuse
SOT-223
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B1 2, 4 = C
3 = E2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25 C)
Grenzwerte
(T
A
= 25 C)
BCP 29
30 V
40 V
10 V
1.5 W
1
)
500 mA
800 mA
100 mA
200 mA
150 C
- 65…+ 150 C
BCP 49
60 V
80 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (DC)
Peak Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
B
I
BM
T
j
T
S
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
E
= 0, V
CB
= 60 V
I
E
= 0, V
CB
= 30 V, T
A
= 150 C
I
E
= 0, V
CB
= 60 V, T
A
= 150 C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V
BCP 29
BCP 49
BCP 29
BCP 49
I
CB0
I
CB0
I
CB0
I
CB0
–
–
–
–
–
–
–
–
100 nA
100 nA
10 A
10 A
I
EB0
–
–
100 nA
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