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參數(shù)資料
| 型號： | BCP6825 |
| 英文描述： | Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 20 mm; Body Material:Glass; Diameter:5mm; Fuse Terminals:Ferrule; Length:20mm; Series:219XA |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 43K |
| 代理商： | BCP6825 |
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996
%
FEATURES
*
Suitable for AF drivers and output stages
*
High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE
BCP69
PARTMARKING DETAIL
BCP68
BCP68 25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
25
V
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
25
V
I
C
=10
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
V
I
C
= 30mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=10
μ
A
Collector Cut-Off
Current
I
CBO
100
10
nA
μ
A
V
CB
=25V
V
CB
=25V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
10
μ
A
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.6
1.0
V
V
I
C
=5A, V
CE
=10V*
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
BCP68
BCP68-25
50
63
160
250
400
400
I
C
=5mA, V
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency
f
T
100
MHz
I
=100mA, V
CE
=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT449 datasheet.
BCP68
C
C
E
B
3 - 19
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCP68-25 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-223 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-223 制造商:NXP Semiconductors 功能描述:NPN Transistor,20V,1A,BCP68-25 |
| BCP68-25 /T3 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP68-25 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP68-25,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP68-25,135 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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