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參數資料
| 型號： | BCX5416 |
| 英文描述： | Obsolete - alternative part: BCX5616 |
| 中文描述： | 過時-替代部分：BCX5616 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | BCX5416 |
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
%
PARTMARKING DETAILS:-
BCX54 – BA
BCX55 – BE
BCX56 – BH
BCX54-10 – BC
BCX55-10 – BG
BCX56-10 – BK
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
COMPLEMENTARY TYPES:-
BCX54 – BCX51 BCX55 – BCX52 BCX56 – BCX53
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX54
BCX55
BCX56
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
45
60
100
V
Collector-Emitter Voltage
45
60
80
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
1
W
-65 to +150
°C
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
BCX54
BCX55
BCX56
V
(BR)CBO
45
60
100
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
V
(BR)CEO
45
60
80
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
5
V
I
E
=10
μ
A
V
CB
=30V
V
CB
=30V, T
amb
=150°C
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=5mA, V
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
MHz I
=50mA, V
CE
=10V,
f=100MHz
Collector Cut-Off Current
0.1
20
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
20
nA
Collector-Emitter Saturation Voltage V
CE(sat)
Base-Emitter Turn-On Voltage
0.5
V
V
BE(on)
h
FE
1.0
V
Static Forward Current Transfer
Ratio
–10
–16
25
40
25
63
100
250
160
250
Transition Frequency
f
T
150
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
C
obo
15
pF
V
CB
=10V, f=1MHz
BCX54
BCX55
BCX56
C
C
B
E
3 - 35
相關PDF資料 |
PDF描述 |
|---|---|
| BCX54-6 | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SOT-89 |
| BCX5610 | Obsolete - alternative part: BCX5616 |
| BCX56-6 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SOT-89 |
| BCX54 | SURFACE MOUNT NPN SILICON TRANSISTOR |
| BCX55 | SURFACE MOUNT NPN SILICON TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCX54-16 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 45V 1A 4-Pin (3+Tab) UPAK Bulk 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-89 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN 1A 45V SOT89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-89 制造商:SPC Multicomp 功能描述:TRANSISTOR, NPN, 1A, 45V, SOT89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:180MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature ;RoHS Compliant: Yes 制造商:SPC Multicomp 功能描述:TRANSISTOR, NPN, 1A, 45V, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:250 ;RoHS Compliant: Yes |
| BCX54-16 /T3 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX54-16 T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 45V 1A 4-Pin(3+Tab) SOT-89 T/R |
| BCX54-16,115 | 功能描述:兩極晶體管 - BJT NPN 45V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX54-16,135 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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