- 您現在的位置：買賣IC網 > PDF目錄369442 > BCX5510 Cartridge Fuse; Current Rating:1.5A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P PDF資料下載
參數資料
| 型號： | BCX5510 |
| 英文描述： | Cartridge Fuse; Current Rating:1.5A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| 中文描述： | 過時-替代部分：BCX5616 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | BCX5510 |
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
%
PARTMARKING DETAILS:-
BCX54 – BA
BCX55 – BE
BCX56 – BH
BCX54-10 – BC
BCX55-10 – BG
BCX56-10 – BK
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
COMPLEMENTARY TYPES:-
BCX54 – BCX51 BCX55 – BCX52 BCX56 – BCX53
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX54
BCX55
BCX56
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
45
60
100
V
Collector-Emitter Voltage
45
60
80
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
1
W
-65 to +150
°C
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
BCX54
BCX55
BCX56
V
(BR)CBO
45
60
100
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
V
(BR)CEO
45
60
80
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
5
V
I
E
=10
μ
A
V
CB
=30V
V
CB
=30V, T
amb
=150°C
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=5mA, V
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
MHz I
=50mA, V
CE
=10V,
f=100MHz
Collector Cut-Off Current
0.1
20
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
20
nA
Collector-Emitter Saturation Voltage V
CE(sat)
Base-Emitter Turn-On Voltage
0.5
V
V
BE(on)
h
FE
1.0
V
Static Forward Current Transfer
Ratio
–10
–16
25
40
25
63
100
250
160
250
Transition Frequency
f
T
150
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
C
obo
15
pF
V
CB
=10V, f=1MHz
BCX54
BCX55
BCX56
C
C
B
E
3 - 35
相關PDF資料 |
PDF描述 |
|---|---|
| BCX5516 | Cartridge Fuse; Current Rating:3.5A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| BCX55-6 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | SOT-89 |
| BCX5416 | Obsolete - alternative part: BCX5616 |
| BCX54-6 | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SOT-89 |
| BCX5610 | Obsolete - alternative part: BCX5616 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCX55-10 | 制造商:NXP Semiconductors 功能描述:PS SMT NPN transistor,BCX5510 1AIc 2Vce |
| BCX55-10 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX55-10,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX55-10115 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 60V 1A SOT89 |
| BCX55-10-BG | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
發布緊急采購，3分鐘左右您將得到回復。