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參數資料
| 型號： | BCX79-10 |
| 英文描述： | Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Type:Very Fast Acting; Fuse Size/Group:1/4 x 1-1/4 "; Body Material:Ceramic; Diameter:6.35mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:31.75mm RoHS Compliant: Yes |
| 中文描述： | 晶體管|晶體管|進步黨| 45V的五（巴西）總裁| 100mA的一（c）|至92 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 240K |
| 代理商： | BCX79-10 |
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相關PDF資料 |
PDF描述 |
|---|---|
| BCX79-8 | Cartridge Fuse; Current Rating:9A; Voltage Rating:250V; Fuse Type:Very Fast Acting; Fuse Size/Group:1/4 x 1-1/4 "; Body Material:Ceramic; Diameter:6.35mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:31.75mm RoHS Compliant: Yes |
| BD839 | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA |
| BD841 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| BD843 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA |
| BF195 | 600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Swtich |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCX79-7 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:AMPLIFIER TRANSISTORS PNP SILICON |
| BCX79-8 | 制造商:Siemens 功能描述:45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| BCX799 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX79-9 | 制造商:Freescale Semiconductor 功能描述: 制造商:Freescale Semiconductor 功能描述:45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| BCX799_D26Z | 功能描述:兩極晶體管 - BJT TO-92 REVERSE MOLD RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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