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參數(shù)資料
| 型號： | BD178-10 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 60V的五（巴西）總裁| 3A條一（c）|至126 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 28K |
| 代理商： | BD178-10 |
Continental Device India Limited
Data Sheet
Page 1 of 3
BD175, 177, 179
BD176, 178, 180
Medium Power Liner and Switching Applications
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
D
175
B
176
45
45
177
178
60
60
3.0
30
150
179
180
80
80
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 1 A; I
B
= 0.1 A
D.C. current gain
I
C
= 150 mA; V
CE
= 2 V
V
CBO
V
CEO
I
C
P
tot
T
j
max.
max.
max.
max.
max.
V
V
A
W
°C
V
CEsat
max.
0.8
V
h
FE
min.
40
BD175, BD177, BD179
BD176, BD178, BD180
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
ALL DIMENSIONS IN MM
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD178-6 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 |
| BD179-6 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126 |
| BD180-6 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:60pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
| BD176-10 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF; Holding Current:50mA |
| BD176-6 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD17810STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD178-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 |
| BD179 | 功能描述:兩極晶體管 - BJT NPN Gen Purpose Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD179 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-126 |
| BD179/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium Power Silicon NPN Transistor |
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