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參數(shù)資料
| 型號(hào)： | BDV96 |
| 英文描述： | SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 100V的五（巴西）總裁| 10A條一（c）|的SOT - 93 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 77K |
| 代理商： | BDV96 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDV92 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | SOT-93 |
| BDV93 | Diac Thyristor; Package/Case:DO-214; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Breakover Voltage Min:30V; Breakover Voltage, Typ:35V |
| BDV94 | Diac Thyristor; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes; Breakover Voltage Min:32V; Breakover Voltage, Typ:36V |
| BDW30 | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 40A I(C) | TO-3 |
| BDW32 | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:230Vrms; Peak Surge Current (8/20uS), Itm:10000A; Clamping Voltage 8/20us Max :595V; Capacitance, Cd:1100pF; Package/Case:20mm Disc; Capacitance:1100pF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDW 47G | 制造商:ON Semiconductor 功能描述:Bulk |
| BDW21 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device |
| BDW21A | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
| BDW21B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-3 |
| BDW21C | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
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