| 型號 | 廠商 | 描述 |
| bds29c 2 |
DIODE TVS 45V 1500W BIDIR 5% SMC | |
| bds29b 2 |
DIODE TVS 36V 1500W BIDIR 5% SMC | |
| bdv66a-sm 2 3 4 5 |
TRANSISTOR DARLINGTON | |
| bdv66b-mag 2 3 4 5 |
TRANSISTOR DARLINGTON | |
| bdv66 2 3 4 5 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(16A,60-100V,125W) |
| bdv66a 2 3 4 5 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(16A,60-100V,125W) |
| bdv66b 2 3 4 5 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(16A,60-100V,125W) |
| bdv67a-sm 2 3 4 5 |
TRANSISTOR DARLINGTON | |
| bdv67b-sm 2 3 4 5 |
TRANSISTOR DARLINGTON | |
| bdv67 2 3 4 5 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(16A,60-100V,125W) |
| bdv67a 2 3 4 5 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(16A,60-100V,125W) |
| bdv67b 2 3 4 5 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(16A,60-100V,125W) |
| bdv91 |
Lead-Free SCR/Diode Array for ESD and Overvoltage Protection; Leaded Process Compatible:Yes | |
| bdv95 |
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:DO-214; Peak Reflow Compatible (260 C):Yes; Breakover Voltage Min:35V; Breakover Voltage, Typ:40V RoHS Compliant: Yes | |
| bdv96 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA | |
| bdv92 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | SOT-93 | |
| bdv93 |
Diac Thyristor; Package/Case:DO-214; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Breakover Voltage Min:30V; Breakover Voltage, Typ:35V | |
| bdv94 |
Diac Thyristor; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes; Breakover Voltage Min:32V; Breakover Voltage, Typ:36V | |
| bdw30 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 40A I(C) | TO-3 | |
| bdw32 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:230Vrms; Peak Surge Current (8/20uS), Itm:10000A; Clamping Voltage 8/20us Max :595V; Capacitance, Cd:1100pF; Package/Case:20mm Disc; Capacitance:1100pF | |
| bdw34 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:250Vrms; Peak Surge Current @ 8/20uS:10000A; Clamping Voltage 8/20us Max :650V; Capacitance, Cd:1000pF; Package/Case:20mm Disc; Capacitance:1000pF; Clamping Voltage Max, Vc:650V RoHS Compliant: No | |
| bdw36 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Peak Surge Current (8/20uS), Itm:10000A; Clamping Voltage 8/20us Max :710V; Capacitance, Cd:900pF; Package/Case:20mm Disc; Clamping Voltage Max, Vc:710V | |
| bdw93cfi 2 3 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:550Vrms; Voltage Rating DC, Vdc:745VDC; Peak Surge Current (8/20uS), Itm:3500A; Clamping Voltage 8/20us Max :1500V; Capacitance, Cd:100pF; Package/Case:10mm Disc | |
| bdw94cfi 2 3 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 12A I(C) | TO-220AB | |
| bdw93cfp 2 3 |
意法半導(dǎo)體 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| bdw93 2 3 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,45-100V,80W) |
| bdw93a 2 3 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,45-100V,80W) |
| bdw93b 2 3 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,45-100V,80W) |
| bdw93c 2 3 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(12A,45-100V,80W) |
| bdw93 2 3 |
Power Innovations International, Inc. | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| bdw93a 2 3 |
Power Innovations International, Inc. | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| bdw93b 2 3 |
Power Innovations International, Inc. | NPN SILICON POWER DARLINGTONS |
| bdw93c 2 3 |
Power Innovations International, Inc. | NPN SILICON POWER DARLINGTONS |
| bdx10 |
VARISTOR,RAD,130V,8.0J& | |
| bdy25a |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:25Vrms; Voltage Rating DC, Vdc:31VDC; Peak Surge Current (8/20uS), Itm:2000A; Clamping Voltage 8/20us Max :76V; Peak Energy (10/1000uS):20J; Capacitance, Cd:12000pF | |
| bdx13 |
VARISTOR, 70.0J 130VAC | |
| bdx12 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| bdx87b |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| bdy25b |
SEMELAB LTD | Bipolar NPN Device |
| bdy25c |
SEMELAB LTD | Bipolar NPN Device |
| bdy25 |
SEMELAB LTD | Bipolar NPN Device |
| bdx14s |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-213AA | |
| bdx14 |
SEMELAB LTD | PNP SILICON TRANSISTOR, EPITAXIAL BASE |
| bdx14a |
SEMELAB LTD | PNP SILICON TRANSISTOR, EPITAXIAL BASE |
| bdx14aa |
TT electronics Semelab Limited | PNP SILICON TRANSISTOR, EPITAXIAL BASE |
| bdx16 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Voltage Rating DC, Vdc:175VDC; Peak Surge Current (8/20uS), Itm:2500A; Clamping Voltage 8/20us Max :340V; Peak Energy (10/1000uS):20J; Capacitance, Cd:450pF | |
| bdx16a |
SEMELAB LTD | Bipolar PNP Device |
| bdx18a |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Voltage Rating DC, Vdc:175VDC; Peak Surge Current (8/20uS), Itm:40000A; Clamping Voltage 8/20us Max :345V; Capacitance, Cd:10000pF; Package/Case:40mm Disc | |
| bdx53s 2 3 4 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 6A I(C) | TO-39 | |
| bdx53bfi 2 3 4 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:115Vrms; Voltage Rating DC, Vdc:153VDC; Peak Surge Current (8/20uS), Itm:4500A; Clamping Voltage 8/20us Max :300V; Peak Energy (10/1000uS):35J; Capacitance, Cd:1100pF |