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參數資料
| 型號： | BF554 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數： | 1/2頁 |
| 文件大小： | 160K |
| 代理商： | BF554 |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300 s, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis 2%
2
01.11.2003
BF 554
High Frequency Transistors
NPN
Surface mount Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
für die Oberflchenmontage
NPN
Power dissipation – Verlustleistung
250 mW
Plastic case
Kunststoffgehuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25 C)
Grenzwerte
(T
A
= 25 C)
BF 554
Collector-Emitter-voltage
B open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
T
j
T
S
20 V
Collector-Base-voltage
E open
30 V
Emitter-Base-voltage
C open
5 V
Power dissipation – Verlustleistung
250 mW
1
)
Collector current – Kollektorstrom (dc)
30 mA
Peak Collector current – Kollektor-Spitzenstrom
30 mA
Junction temperature – Sperrschichttemperatur
150 C
Storage temperature – Lagerungstemperatur
- 65…+ 150 C
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 20 V
I
E
= 0, V
CB
= 20 V, T
j
= 100 C
DC current gain – Kollektor-Basis-Stromverhltnis
2
)
I
CB0
I
CB0
–
–
100 nA
–
–
10 A
V
CE
= 10 V, I
C
= 1 mA
h
FE
60
–
250
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