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參數(shù)資料
| 型號： | BF961B |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 160K |
| 代理商： | BF961B |
BF961
Document Number 85002
Rev. 1.5, 25-Nov-04
Vishay Semiconductors
www.vishay.com
1
13625
1
4
3
2
G2
G1
D
S
Electrostatic sensitive device.
Observe precautions for handling.
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Mechanical Data
Case:
TO-50 Plastic case
Weight:
approx. 124 mg
Marking:
BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source voltage
Maximum Thermal Resistance
1)
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
μ
m Cu
Part
Ordering Ccode
Marking
Package
BF961
BF961A or BF961B
BF961
TO50
BF961A
BF961A
BF961
TO50
BF961B
BF961B
BF961
TO50
Test condition
Symbol
V
DS
I
D
± I
G1/G2SM
Value
20
Unit
V
Drain current
30
mA
Gate 1/Gate 2 - source peak
current
Total power dissipation
10
mA
T
amb
≤
60 °C
P
tot
T
Ch
T
stg
200
mW
Channel temperature
150
°C
Storage temperature range
- 55 to + 150
°C
Parameter
Test condition
Symbol
R
thChA
Value
450
Unit
K/W
Channel ambient
1)
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