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參數(shù)資料
| 型號： | BF979 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PNP Planar RF Transistor |
| 中文描述： | 進步黨射頻硅平面晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 51K |
| 代理商： | BF979 |
BF979
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (5)
Document Number 85006
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and
low modulation.
Features
High cross modulation performance
High power gain
Low noise
High reverse attenuation
94 9308
1
3
2
BF979 Marking: BF979
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
13623
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
j
T
stg
Value
20
20
3
50
300
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
60 C
–55 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
300
Unit
K/W
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| BF979_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PNP Planar RF Transistor |
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