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參數(shù)資料
| 型號： | BFC11 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
| 中文描述： | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 26K |
| 代理商： | BFC11 |
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0V , I
D
= 250
μ
A
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 2.5mA
Min.
800
Typ.
Max.
Unit
V
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
V
DSS
I
D
I
DM
, I
LM
V
GS
P
D
T
J
, T
STG
T
L
1
3
4
2
R
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
14.9 (0.587)
15.1 (0.594)
3.3 (0.129)
3.6 (0.143)
7.8 (0.307)
8.2 (0.322)
31.5 (1.240)
31.7 (1.248)
4.0 (0.157)
(2 Places)
R =
4.0 (0.157)
4.2 (0.165)
)
)
4.1 (0.161
4.3 (0.169
4.8 (0.187)
4.9 (0.193)
(4 places)
W =
H =
8.9 (0.350)
9.6 (0.378)
11.8 (0.463)
12.2 (0.480)
Hex Nut M4
(4 places)
1
1
2
2
0.75 (0.030)
0.85 (0.033)
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
SOT–227 Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
and Inductive Current Clamped
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
800
27
108
±30
520
4.16
–55 to 150
300
V
A
A
V
W
W / °C
°C
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
27
0.30
250
1000
±100
2
4
A
μ
A
nA
V
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BFC11
LAB
SEME
V
DSS
I
D(cont)
R
DS(on)
800V
27A
0.30
* Source 2 may be omitted,
shorted to Source 1 or used for
Gate drive circuit.
4TH GENERATION MOSFET
Terminal 1
Terminal 3
Source 2*
Gate
Terminal 2
Terminal 4
Drain
Source 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFC12 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC13 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC14 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC15 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET |
| BFC16 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 40A I(D) | SOT-227B |
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