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參數資料
| 型號： | BF822 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (NPN) |
| 中文描述： | 小信號晶體管（NPN）的 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BF822 |
FEATURES
Small Signal Transistors (NPN)
Dimensions in inches and (millimeters)
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking code
BF820 = 1V
BF822 = 1X
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
NPN Silicon Epitaxial Planar Transistors
especially suited for application in class-B
video output stages of TV receivers and
monitors.
As complementary types, the PNP tran-
sistors BF821 and BF823 are recom-
mended.
BF820, BF822
Symbol
Value
Unit
Collector-Base Voltage
BF820
BF822
V
CBO
V
CBO
300
250
V
V
Collector-Emitter Voltage
BF822
V
CEO
250
V
Collector-Emitter Voltage
BF820
V
CER
300
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Peak Collector Current
I
CM
100
mA
Power Dissipation at T
SB
= 50 °C
P
tot
300
1)
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Device on fiberglass substrate, see layout
相關PDF資料 |
PDF描述 |
|---|---|
| BF822 | Surface mount Si-Epitaxial PlanarTransistors |
| BF823 | Small Signal Transistors (PNP) |
| BF823 | Surface mount Si-Epitaxial PlanarTransistors |
| BF995A | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF995 | CAP CERAMIC 7.5PF 50V C0G 0603 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BF822 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF822,215 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| bf822215 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 250V 50MA S |
| BF822S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 25MA I(C) | SOT-23 |
| BF822T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | SOT-23 |
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