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參數(shù)資料
| 型號： | BF823 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP) |
| 中文描述： | 小信號晶體管（進(jìn)步黨） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 49K |
| 代理商： | BF823 |
FEATURES
Small Signal Transistors (PNP)
Dimensions in inches and (millimeters)
.016 (0.4)
)
.037(0.95) .037(0.95)
m
.122 (3.1)
.118 (3.0)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking code
BF821 = 1W
BF823 = 1Y
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
PNP Silicon Epitaxial Planar Transistors
especially suited for application in class-
B video output stages of TV receivers
and monitors.
As complementary types, the NPN tran-
sistors BF820 and BF822 are recommended.
Symbol
Value
Unit
Collector-Base Voltage
BF821
BF823
–V
CBO
–V
CBO
300
250
V
V
Collector-Emitter Voltage
BF823
–V
CEO
250
V
Collector-Emitter Voltage
BF821
–V
CER
300
V
Emitter-Base Voltage
–V
EBO
5
V
Collector Current
–I
C
50
mA
Peak Collector Current
–I
CM
100
mA
Power Dissipation at T
SB
= 50 °C
P
tot
300
1)
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Device on fiberglass substrate, see layout
BF821, BF823
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF823 | Surface mount Si-Epitaxial PlanarTransistors |
| BF995A | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF995 | CAP CERAMIC 7.5PF 50V C0G 0603 |
| BF995B | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| BF996S | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF823 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF823,215 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF823S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 25MA I(C) | SOT-23 |
| BF823T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 100MA I(C) | SOT-23 |
| BF824 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP RF SOT-23 |
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