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參數(shù)資料
| 型號： | BFR92AF |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 64K |
| 代理商： | BFR92AF |
VISHAY
BFR92AF
Document Number 85098
Rev. 1.3, 30-Aug-04
Vishay Semiconductors
www.vishay.com
1
2
1
3
Electrostatic sensitive device.
Observe precautions for handling.
16867
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Features
High power gain
Low noise figure
High transition frequency
Applications
Wide band amplifier up to GHz range.
Mechanical Data
Typ:
BFR92AF
Case:
SOT-490 Plastic case
Weight:
approx. 2.5 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Maximum Thermal Resistance
1)
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
Part
Marking
Package
BFR92AF
P2
SOT-490
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
Unit
V
Collector-emitter voltage
15
V
Emitter-base voltage
2
V
Collector current
30
mA
Total power dissipation
T
amb
≤
60 °C
200
mW
Junction temperature
150
°C
Storage temperature range
-65 to +150
°C
Parameter
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
Junction ambient
1)
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