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參數資料
| 型號： | BLC6G10-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, SOT-895-1, 2 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 53K |
| 代理商： | BLC6G10-200 |
1.
Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 1400 mA:
N
Average output power = 40 W
N
Power gain = 20 dB
N
Efficiency = 27 %
N
ACPR =
39 dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (800 MHz to 1000 MHz)
I
Internally matched for ease of use
1.3 Applications
I
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
Table 1:
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
f
(MHz)
2-carrier W-CDMA
869 to 894
Typical performance
V
DS
(V)
28
P
L(AV)
(W)
40
G
p
(dB)
20
η
D
(%)
27
ACPR
(dBc)
39
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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