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參數資料
| 型號： | BLC6G20LS-110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, SOT-896-1, 2 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 52K |
| 代理商： | BLC6G20LS-110 |
1.
Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 950 mA:
N
Output power = 25 W (AV)
N
Gain = 18 dB
N
Efficiency = 32 %
N
IMD3 =
37 dBc
N
ACPR =
40 dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
Table 1:
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation f
V
DS
(MHz)
(V)
CW
1930 to 1990
28
GSM EDGE
1930 to 1990
28
2-carrier W-CDMA
1930 to 1990
28
Typical performance
P
L
(W)
100
48 (AV)
25 (AV)
G
p
(dB)
17
17.5
18
η
D
(%)
51
40
32
ACPR
400
(dBc)
-
60
-
ACPR
600
(dBc)
-
70
-
EVM
(%)
-
2.1
-
IMD3
(dBc)
-
-
37
[1]
ACPR
(dBc)
-
-
40
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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