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參數(shù)資料
| 型號(hào)： | BPV10NF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 940nm 0.55A/W Sensitivity 2-Pin T-1 3/4 |
| 中文描述： | Photodiodes 60V 215mW 875nm |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 123K |
| 代理商： | BPV10NF |
BPV10NF
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 22-Nov-11
1
Document Number: 81503
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon PIN Photodiode
DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high
radiant sensitivity in black, T-1 plastic package with
daylight blocking filter. Filter bandwidth is matched with
870 nm to 950 nm IR emitters.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Radiant sensitive area (in mm
2
): 0.78
Leads with stand-off
High radiant sensitivity
Daylight blocking filter matched with 870 nm to 950 nm
emitters
High bandwidth: > 100 MHz at V
R
= 12 V
Fast response times
Angle of half sensitivity:
= ± 20°
Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
High speed detector for infrared radiation
Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
16140-1
PRODUCT SUMMARY
COMPONENT
BPV10NF
I
ra
(μA)
60
(deg)
± 20
λ
0.5
(nm)
790 to 1050
ORDERING INFORMATION
ORDERING CODE
BPV10NF
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm
2
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
T
amb
≤
25 °C
t
≤
5 s, 2 mm from body
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BPV10NF | 制造商:Vishay Semiconductors 功能描述:Photo Diode |
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| BPV11_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPV11F | 功能描述:光電晶體管 15 Degree 150mW RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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