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參數資料
| 型號： | BPW77NB |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA |
| 中文描述： | Photodetector Transistors NPN Phototransistor 850nm +/-10 Deg |
| 文件頁數： | 1/5頁 |
| 文件大小： | 133K |
| 代理商： | BPW77NB |
Silicon NPN Phototransistor, RoHS Compliant
www.vishay.com
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527
402
Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Vishay Semiconductors
DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and glass lens. It is sensitive to visible and near
infrared radiation.
FEATURES
Package type: leaded
Package form: TO-18
Dimensions (in mm): 4.7
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 10°
Base terminal connected
Hermetically sealed package
Lead
(Pb)-free
component
in
accordance
with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8401
PRODUCT SUMMARY
COMPONENT
Ica (mA)
(deg)
λ
0.1 (nm)
BPW77NA
7.5 to 15
± 10
450 to 1080
BPW77NB
> 10
± 10
450 to 1080
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
BPW77NA
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
BPW77NB
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector base voltage
VCBO
80
V
Collector emitter voltage
VCEO
70
V
Emitter base voltage
VEBO
5V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Total power dissipation
Tamb ≤ 25 °C
PV
250
mW
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 125
°C
Storage temperature range
Tstg
- 40 to + 125
°C
Soldering temperature
t
≤ 5 s
Tsd
260
°C
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm2
RthJA
400
K/W
Thermal resistance junction/gase
RthJC
150
K/W
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