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參數(shù)資料
| 型號(hào)： | BPW85C |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 86K |
| 代理商： | BPW85C |
BPW85
Vishay Telefunken
1 (6)
Rev. 3, 16-Nov-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81531
Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 ( 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radi-
ation.
The viewing angle of
±
25 makes it insensible to ambi-
ent straylight.
Features
Fast response times
High photo sensitivity
Standard T–1 ( 3 mm ) clear plastic package
Axial terminals
Angle of half sensitivity
=
±
25
Suitable for visible and near infrared radiation
Selected into sensitivity groups
94 8396
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
70
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
C
C
C
K/W
t
p
/T = 0.5, t
p
T
amb
10 ms
55 C
t
3 s, 2 mm from case
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW85C | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 |
| BPW96 | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96A | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96A | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| BPW96B | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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