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參數資料
| 型號： | BS170L |
| 廠商： | CALOGIC LLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode MOS Transistor |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 25K |
| 代理商： | BS170L |
N-Channel Enhancement-Mode
MOS Transistor
2N7000 /BS170L
DESCRIPTION
The 2N7000 utilizes Calogic’s vertical DMOS technology. The
device is well suited for switching applications where B
V
of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.
ORDERING INFORMATION
Part
2N7000
BS170L
X2N7000
Package
Plastic TO-92
Plastic TO-92
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
1
2
3
TO-92
(TO-226AA)
BOTTOM VIEW
1
2
3
1
2
3
SOURCE
GATE
DRAIN
1
2
3
2N7000
PIN CONFIGURATION
PRODUCT SUMMARY
P/N
V
(BR)DSS
(V)
r
DS(ON)
(
)
I
D
(A)
2N7000
60
5
0.2
BS170
60
5
0.5
CD5
BOTTOM VIEW
1
2
3
1
2
3
DRAIN
GATE
SOURCE
3
2
1
BS170L
相關PDF資料 |
PDF描述 |
|---|---|
| BS807 | N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| BS809 | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| BS817 | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| BS828 | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| BS829 | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BS170P | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170P | 制造商:Diodes Incorporated 功能描述:MOSFET N E-LINE |
| BS170PSTOA | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170PSTOB | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170PSTZ | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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