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參數資料
| 型號： | BSM100GD120DLC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 160 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ECONO 3, 39 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | BSM100GD120DLC |
Technische Information / Technical Information
BSM100GD120DLC
IGBT-Module
IGBT-Modules
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
I
C,nom.
100
A
T
C
= 25 °C
I
C
160
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
200
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
650
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
100
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
200
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
1,71
kA
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 100A, V
GE
= 15V, T
vj
= 25°C
V
CE sat
-
2,1
2,6
V
I
C
= 100A, V
GE
= 15V, T
vj
= 125°C
-
2,4
2,9
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 4mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
5,5
6,5
V
Gateladung
gate charge
V
GE
= -15V...+15V
Q
G
-
1,1
-
μ
C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
6,5
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
0,42
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
10
500
μ
A
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125°C
-
500
-
μ
A
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: Mark Münzer
date of publication: 09.09.1999
approved by: M. Hierholzer
revision: 2
1(8)
Seriendatenblatt_BSM100GD120DLC.xls
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