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參數(shù)資料
| 型號： | BSO215C |
| 英文描述： | High Voltage Fast Recovery Rectifier Diodes |
| 中文描述： | ？SIPMOS?；パa。 20V的。 SO - 8封裝。導通狀態(tài)（N / P系列）\u003d 0.10/0.10Ohm。編號（北）\u003d 3.7A。編號（規(guī)劃）\u003d - 3.7A。當?shù)毓蛦T？ |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 153K |
| 代理商： | BSO215C |
1999-09-22
Page 1
Preliminary data
BSO 215 C
SIPMOS
Small-Signal-Transistor
Product Summary
Drain source voltage
Drain-Source on-state
resistance
N
20
0.1
P
V
DS
R
DS(on)
-20
0.1
V
Continuous drain current
I
D
3.7
-3.7
A
Features
Dual N- and P -Channel
Enhancement mode
Logic Level
Avalanche rated
dvdt rated
Type
BSO 215 C
Package
SO 8
Ordering Code
Q67041-S4025
Maximum Ratings
,at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
N
P
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current
T
A
= 25 °C
Avalanche energy, single pulse
I
D
= 3 A,
V
DD
= 15 V,
R
GS
= 25
I
D
= -3.7 A ,
V
DD
= -15 V,
R
GS
= 25
Avalanche energy, periodic limited by
T
jmax
Reverse diode dvdt, T
jmax
= 150 °C
I
S
= 3 A,
V
DS
= 16 V,
didt
= 200 A/μs
I
S
= -2.7 A,
V
DS
= -16 V,
didt
= -200 A/μs
Gate source voltage
Power dissipation
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
3.7
3
-3.7
-3
A
I
D puls
14.8
-14.8
E
AS
26
-
-
68
mJ
E
AR
dvdt
0.2
6
-
0.2
-
6
kV/μs
V
GS
P
tot
±20
2
±20
2
V
W
T
j ,
T
stg
-55...+150
55/150/56
°C
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| BSO220N | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS-R Small-Signal-Transistor |
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| BSO220N03MS G | 功能描述:MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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