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參數資料
| 型號： | BSS123A |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 1/1頁 |
| 文件大小： | 45K |
| 代理商： | BSS123A |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 – APRIL 1998
FEATURES
*
BV
DSS
= 100V
*
Low Threshold
PARTMARKING DETAIL
– SAA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
V
DGR
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
100
V
Drain-Gate Voltage
100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
170
mA
680
±
20
360
mA
Gate-Source Voltage
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
mW
-55 to +150
°C
TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
100
V
I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5
2.0
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
I
DSS
50
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=100V, V
GS
=0V
Zero Gate Voltage
Drain Current
500
nA
Static Drain-Source
On-State Resistance (1)
R
DS(on)
6
10
V
GS
=10V, I
D
=170mA
V
GS
=4.5V, I
D
=170mA
V
DS
=25V, I
D
=100mA
Forward
Transconductance(1)(2)
g
fs
80
mS
Input Capacitance (2)
C
iss
C
oss
25
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2)
9
pF
Reverse Transfer
Capacitance (2)
C
rss
4
pF
Turn-On Delay Time (2)(3) t
d(on)
10
ns
V
DD
≈
30V, I
D
=280mA
Rise Time (2)(3)
t
r
10
ns
Turn-Off Delay Time (2)(3) t
d(off)
Fall Time (2)(3)
15
ns
t
f
25
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
BSS123A
D
G
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BSS123ATA | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSS123ATC | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSS123E6327 | 功能描述:MOSFET N-CH 100V 170MA SOT-23 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:SIPMOS® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| BSS123E6327T | 制造商:Infineon Technologies AG 功能描述:N-CH MOSFET SOT23 T&R 3K 100V |
| BSS123E6433XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R |
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