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參數資料
| 型號： | BSS8402DW-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 115 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTC PACKAGE-6 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 138K |
| 代理商： | BSS8402DW-7 |
DS30380 Rev. 4 - 2
1 of 5
BSS8402DW
www.diodes.com
Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
SPICE MODELS: BSS8402DW
Features
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Also Available in Lead Free Version
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layoutCase: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 5
Terminal Connections: See Diagram
Marking: KNP (See Page 5)
Weight: 0.008 grams (approx.)
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
D
2
S
2
G
2
D
1
G
1
S
1
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
0
8°
All Dimensions in mm
TOP VIEW
Maximum Ratings N-CHANNEL - Q
1
, 2N7002 Section
@ T
A
= 25 C unless otherwise specified
Maximum Ratings - Total Device
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximum Ratings P-CHANNEL - Q
2
, BSS84 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage R
GS
20K
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
-130
mA
T
C
U
D
O
R
P
W
E
N
相關PDF資料 |
PDF描述 |
|---|---|
| BSS8402DW | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84W | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BST16 | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| BST39 | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
相關代理商/技術參數 |
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| BSS8402DWQ-7 | 功能描述:MOSFET N/P-CH 60V/50V 制造商:diodes incorporated 系列:- 包裝:帶卷（TR） 零件狀態:有效 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓（Vdss）:60V，50V 電流 - 連續漏極（Id）（25°C 時）:115mA，130mA 不同?Id，Vgs 時的?Rds On（最大值）:13.5 歐姆 @ 500mA，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:- 不同 Vds 時的輸入電容（Ciss）:50pF @ 25V 功率 - 最大值:200mW 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商器件封裝:SOT-363 標準包裝:3,000 |
| BSS8402DWT/R13 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS |
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