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參數資料
| 型號： | BT139-500H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs high noise immunity |
| 中文描述： | 500 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 45K |
| 代理商： | BT139-500H |
Philips Semiconductors
Product specification
Triacs
high noise immunity
BT139 series H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope,
intended
applications requiring
immunity
in
addition
bidirectional
blocking
capability
and
performance.
Typical
include
motor
control,
lighting, heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
use
in
high noise
to
voltage
cycling
applications
industrial
BT139-
500H
500
600H
600
800H
800
high,
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
thermal
I
T(RMS)
I
TSM
16
140
16
140
16
140
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
-
-
-
140
150
98
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
September 1997
1
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| BT139-600H | Triacs high noise immunity |
| BT139_SERIES | Triacs |
| BT139-500 | Triacs |
| BT139-500F | Triacs |
| BT139-500G | Triacs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BT139-600 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT139-600,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT139-600 | 制造商:NXP Semiconductors 功能描述:TRIAC 16A 600V TO-220 |
| BT139-600/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC 16A/600V |
| BT139-600-0Q | 功能描述:BT139-600-0/SIL3P/STANDARD MAR 制造商:ween semiconductors 系列:- 包裝:管件 零件狀態:在售 三端雙向可控硅類型:標準 電壓 - 斷態:600V 電流 - 通態（It（RMS））（最大值）:16A 電壓 - 柵極觸發（Vgt）（最大值）:1V 電流 - 不重復浪涌 50，60Hz（Itsm）:155A，170A 電流 - 柵極觸發（Igt）（最大值）:70mA 電流 - 保持（Ih）（最大值）:45mA 配置:單一 工作溫度:125°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220AB 標準包裝:1,000 |
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