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參數資料
| 型號： | BTA212-800F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅) |
| 中文描述： | 800 V, 12 A, TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 44K |
| 代理商： | BTA212-800F |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated
triacs in a plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balancetherequirementsofcommutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low
power
drivers,
controllers.
guaranteed
commutation
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BTA212-
BTA212-
BTA212-
600D
600E
600F
600
800E
800F
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
I
T(RMS)
I
TSM
12
95
12
95
A
A
including
micro
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
600
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
99 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
95
105
45
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
T1
T2
G
1 2 3
tab
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
February 2000
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BTA212B-800C | Three quadrant triacs high commutation |
| BTA212B-600C | Three quadrant triacs high commutation |
| BTA212X-500B | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA212_SERIES_B | Three quadrant triacs high commutation |
| BTA212-500B | TRIAC|500V V(DRM)|12A I(T)RMS|TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BTA212B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B_SERIES_B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
| BTA212B_SERIES_D/E_AND_F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA212B-500B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
| BTA212B-500C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs high commutation |
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