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參數資料
型號: BU4525DL
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 14 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-430, 3 PIN
文件頁數: 1/4頁
文件大小: 20K
代理商: BU4525DL
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525DL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
9.0
t.b.f
0.4
t.b.f
MAX.
1500
800
14
30
125
3.0
2.2
-
-
0.55
t.b.f
UNIT
V
V
A
A
W
V
V
A
A
μ
s
μ
s
T
hs
25 C
I
C
= 9.0 A; I
B
= 2.25 A
I
= 9.0 A
f = 16 kHz
f = 70 kHz
I
= 9.0 A;f = 16 kHz
f = 70 kHz
t
f
Fall time
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
heat
sink
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
25 C
1
2
3
b
c
e
Rbe
1
Turn-off current.
July 1998
1
Rev 1.000
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相關代理商/技術參數
參數描述
BU4525DW 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
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