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參數(shù)資料
| 型號： | BUJ303AD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 中文描述： | 5 A, 500 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 189K |
| 代理商： | BUJ303AD |
1.
Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
Fast switching
Low thermal resistance
Surface mountable package
Very high voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
High frequency electronic lighting
ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
BUJ303AD
NPN power transistor
Rev. 1 — 2 September 2011
Product data sheet
DA
Quick reference data
Parameter
collector current
Conditions
see
Figure 1
; see
Figure 2
;
see
Figure 4
T
mb
≤
25 °C; see
Figure 3
V
BE
= 0 V
Min
-
Typ
-
Max
5
Unit
A
P
tot
V
CESM
total power dissipation
collector-emitter peak
voltage
-
-
-
-
80
1000 V
W
Static characteristics
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 5 V;
T
mb
= 25 °C; see
Figure 11
I
C
= 500 mA; V
CE
= 5 V;
T
mb
= 25 °C; see
Figure 11
10
22
30
14
25
35
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ303AD,118 | 功能描述:兩極晶體管 - BJT NPN power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ303AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 5A 500V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 5A, 500V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 5A, 500V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:32W; DC Collector Current:5A; DC Current Gain hFE:22; No. of Pins:3 ;RoHS Compliant: Yes |
| BUJ303AX,127 | 功能描述:兩極晶體管 - BJT NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ303AX_11 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN power transistor Very high voltage capability Isolated package |
| BUJ303B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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