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參數資料
| 型號： | BUJD103AD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor with integrated diode |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 333K |
| 代理商： | BUJD103AD |
1.
Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
BUJD103AD
NPN power transistor with integrated diode
Rev. 3 — 3 August 2010
Product data sheet
Quick reference data
Parameter
collector current
Conditions
see
Figure 1
; see
Figure 2
; DC;
see
Figure 4
see
Figure 3
; T
mb
≤
25 °C
Min
-
Typ
-
Max
4
Unit
A
P
tot
total power
dissipation
collector-emitter
peak voltage
-
-
80
W
V
CESM
V
BE
= 0 V
-
-
700
V
Static characteristics
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 5 V;
see
Figure 10
; T
j
= 25 °C
V
CE
= 5 V; I
C
= 3 A;
T
mb
= 25 °C; see
Figure 10
13
21
32
-
12.5
-
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