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參數資料
型號: BUJD203AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN power transistor with integrated diode
中文描述: 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, TO-220, FULL PACK-3
文件頁數: 1/14頁
文件大小: 200K
代理商: BUJD203AX
1.
Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Isolated package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
BUJD203AX
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
Quick reference data
Parameter
collector current
Conditions
see
Figure 1
; see
Figure 2
; DC;
see
Figure 4
T
h
25 °C; see
Figure 3
Min
-
Typ
-
Max
4
Unit
A
P
tot
total power
dissipation
collector-emitter
peak voltage
-
-
26
W
V
CESM
V
BE
= 0 V
-
-
850
V
Static characteristics
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 5 V;
see
Figure 11
; T
h
= 25 °C
V
CE
= 5 V; I
C
= 3 A; see
Figure 11
;
T
h
= 25 °C
I
B
= 0 A; L
C
= 25 mH; I
C
= 10 mA;
see
Figure 6
; see
Figure 7
13
21
32
-
12.5
-
V
CEOsus
collector-emitter
sustaining voltage
400
450
-
V
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