- 您現在的位置：買賣IC網 > PDF目錄385199 > BUJD203AD (NXP SEMICONDUCTORS) NPN power transistor with integrated diode PDF資料下載
參數資料
| 型號： | BUJD203AD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor with integrated diode |
| 中文描述： | 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 214K |
| 代理商： | BUJD203AD |
1.
Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface-mountable package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
BUJD203AD
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
Quick reference data
Parameter
collector current
Conditions
see
Figure 1
; see
Figure 2
; DC;
see
Figure 4
see
Figure 3
; T
mb
≤
25 °C
Min
-
Typ
-
Max
4
Unit
A
P
tot
total power
dissipation
collector-emitter
peak voltage
-
-
80
W
V
CESM
V
BE
= 0 V
-
-
850
V
Static characteristics
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 5 V;
see
Figure 12
; T
mb
= 25 °C
V
CE
= 5 V; I
C
= 3 A; T
mb
= 25 °C;
see
Figure 12
I
B
= 0 A; L
C
= 25 mH; I
C
= 10 mA;
see
Figure 7
; see
Figure 8
13
21
32
-
12.5
-
V
CEOsus
collector-emitter
sustaining voltage
400
450
-
V
相關PDF資料 |
PDF描述 |
|---|---|
| BUJD203AX | NPN power transistor with integrated diode |
| BUJD203A | NPN power transistor with integrated diode |
| BUK6207-55C | N-channel TrenchMOS intermediate level FET |
| BUK6209-30C | N-channel TrenchMOS intermediate level FET |
| BUK6210-55C | N-channel TrenchMOS intermediate level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUJD203AD,118 | 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJD203AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes |
| BUJD203AX,127 | 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU-JSB3100L | 制造商:Fuji Electric 功能描述: |
| BUK 9575-100A | 制造商:NXP Semiconductors 功能描述:Bulk |
發布緊急采購，3分鐘左右您將得到回復。