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參數資料
型號: BUK127-50DL
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 700MA I(D) | SOT-223
中文描述: 晶體管| MOSFET的| N溝道| 50V五(巴西)直| 700mA的一(d)|的SOT - 223
文件頁數: 1/11頁
文件大小: 60K
代理商: BUK127-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin surface mount
plastic package.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
Continuous drain source voltage
50
V
I
D
Continuous drain current
0.7
A
APPLICATIONS
P
D
Total power dissipation
1.8
W
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
T
j
Continuous junction temperature
150
C
R
DS(ON)
Drain-source on-state resistance
200
m
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
4
drain (tab)
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
4
1
2
3
P
D
S
I
TOPFET
October 2001
1
Rev 1.011
相關PDF資料
PDF描述
BUK130-50DL Logic level TOPFET SMD version of BUK119-50DL
BUK148-50DL TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR
BUK200-50X_1 PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
BUK200-50X PowerMOS transistor TOPFET high side switch
BUK200-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關)
相關代理商/技術參數
參數描述
BUK127-50DL T/R 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50DL,115 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK127-50GT T/R 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT,115 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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